In an extrinsic semiconductor, the hole concentration is given to be $1.5n_i$ where $n_i$ is the intrinsic carrier concentration of $1 \times 10^{10} \, cm^{-3}$. The ratio of electron to hole mobility for equal hole and electron drift current is given as ________ (rounded off to two decimal places).

GATE 2023 Electronics & Communication Q56 — Electronics and Communication Engineerin

GATE 2023Set MasterQ56NATanswer pendingexplanation soonmedium

Electronics and Communication Engineering · Electronic Devices - Semiconductors

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Drill mode: electron mobility · 2/2

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Electronic Devices - Semiconductors has appeared in GATE Electronics & Communication 2 times across 1 years (2023).

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semiconductorhole concentrationelectron mobilitydrift current