semiconductor

Consider an LED based on a direct bandgap semiconductor material with energy bandgap 1.3 eV. Given: Plank's constant, h = 6.63 × 10^-34 J s and speed of light in free space is 3 ×...

Consider that the concentration of electrons in a semiconductor bar varies linearly from 2 × 10^17 cm^−3 at x = 1 µm to 1× 10^16 cm^−3 at x = 4 µm along the x-direction. Assume tha...

Which of the following can be used as an n-type dopant for silicon? Select the correct option(s).

The intrinsic carrier concentration of a semiconductor is 2.5 x 10^16 /m³ at 300 K. If the electron and hole mobilities are 0.15 m²/Vs and 0.05 m²/Vs, respectively, then the intrin...

The electron mobility μn in a non-degenerate germanium semiconductor at 300 K is 0.38 m²/Vs. The electron diffusivity Dn at 300 K (in cm²/s, rounded off to the nearest integer) is...

For non-degenerately doped n-type silicon, which one of the following plots represents the temperature (T) dependence of free electron concentration (n)?

The free electron concentration profile n(x) in a doped semiconductor at equilibrium is shown in the figure, where the points A, B, and C mark three different positions. Which of t...

A non-degenerate n-type semiconductor has 5% neutral dopant atoms. Its Fermi level is located at 0.25 eV below the conduction band (Ec) and the donor energy level (ED) has a degene...

In a semiconductor, if the Fermi energy level lies in the conduction band, then the semiconductor is known as

For an intrinsic semiconductor at temperature T = 0 K, which of the following statement is true?

In an extrinsic semiconductor, the hole concentration is given to be $1.5n_i$ where $n_i$ is the intrinsic carrier concentration of $1 \times 10^{10} \, cm^{-3}$. The ratio of elec...

In a semiconductor device, the Fermi-energy level is 0.35 eV above the valence band energy. The effective density of states in the valence band at T = 300 K is $1 \times 10^{19}cm^...

Which one of the following options describes correctly the equilibrium band diagram at T=300 K of a Silicon pnn+p++ configuration shown in the figure?

The correct circuit representation of the structure shown in the figure is

At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant D p in cm 2 /s is__________.

A small concentration of minority carries is injected into a homogeneous semiconductor crystal at one point. An electric field of 10 V/cm is applied across the crystal and this mov...

A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with $$N_D=10^{19}/cm^3$$. If the excess elec...

A silicon sample is uniformly doped with 10 16 phosphorous atoms/cm 3 and 2 ×10 16 boron atoms/cm 3 . If all the dopants are fully ionized, the material is