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Concept drill

electron mobility

GATE Electronics & Communication · Electronic Devices - Semiconductors · 2023-2025

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2025 Q48

The electron mobility μn in a non-degenerate germanium semiconductor at 300 K is 0.38 m²/Vs. The electron diffusivity Dn at 300 K (in cm²/s, rounded off to the nearest integer) is...

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2023 Q56

In an extrinsic semiconductor, the hole concentration is given to be $1.5n_i$ where $n_i$ is the intrinsic carrier concentration of $1 \times 10^{10} \, cm^{-3}$. The ratio of elec...

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