Consider two BJT's biased at the same collector current with area A 1 = 0.2 μm × 0.2 μm and A 2 = 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentration is 1 × 10 10 cm -3 , and q = 1.6 × 10 -19 C, the difference between the base-emitter voltages (in mV) of the two BJT's (i.e., V BE1 – V BE2 ) is___________.

GATE 2014 Electronics & Communication PYQ — Electronic Devices and Vlsi

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Electronic Devices and Vlsi · BJT

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Recurring concept

BJT has appeared in GATE Electronics & Communication 20 times across 13 years (2014, 2015, 2016, 2017, 2024, ...).