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BJT

GATE Electronics & Communication · 20 questions across 13 years (1989-2024) · 33% recurrence rate

Recurrence sparkline

1989–2024
198920072024

Difficulty mix

easy 55%
med 40%
hard 5%

Question types

MCQ14
NAT3
MSQ1
STMT1
OTHER1

All 20 questions on BJT

2024 PYQ

Which of the following statements is/are true for a BJT with respect to its DC current gain $\beta$?

Hard✓
2017 PYQ

An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then

Easy✓
2016 PYQ

The Ebers-Moll model of a BJT is valid

Easy✓
2015 PYQ

An npn BJT having reverse saturation current $$I_s\;=\;10^{-15}\;A$$ is biased in the forward active region with V BE = 700 mV. The thermal voltage (V T ) is 25 mV and the current gain (β) may vary from 50 to 150 due to...

Med
2015 PYQ

If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?

Med✓
2015 PYQ

In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage V EB = 600 mV, the emitter-collector voltage V EC (in Volts) is ______.

Med📊
2014 PYQ

An increase in the base recombination of a BJT will increase

Med✓
2014 PYQ

Consider two BJT's biased at the same collector current with area A 1 = 0.2 μm × 0.2 μm and A 2 = 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentratio...

Med
2011 PYQ

For a BJT, the common-base current gain $$\alpha = \,\,0.98$$ and the colector base junction reverse bias saturation current I co = 0.6 $$\mu {\rm A}$$. This BJT is connected in the common emitter mode and operated in th...

Easy✓
2011 PYQ

For a BJT the common base current gain $$\alpha$$ = 0.98 and the collector base junction reverse bias saturation current I CO = 0.6μA. This BJT is connected in the common emitter mode and operated in the active region wi...

Easy✓
2010 PYQ

In a uniformly doped BJT, assume that N E , N B and N C are the emitter, base and collector dopings in atoms/cm 3 , respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following...

Easy✓
2007 PYQ

The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:

Easy✓
2004 PYQ

Consider the following statements S1 and S2. S 1 : The $$\beta$$ of a bipolar transistor reduces if the base width is increased. S 2 : The $$\beta$$ of a bipolar transistor increases if the doping concentration in the ba...

Med✓
2000 PYQ

Introducing a resistor in the emitter of a common amplifier, stabilizes the dc operating point against variations in

Easy✓
1995 PYQ

The Early-Effect in a bipolar junction transistor is caused by

Easy✓
1995 PYQ

The breakdown voltage of a transistor with its base open is BV CEO with emitter open is BV CBO , then

Med✓
1995 PYQ

A BJT is said to be operating in the saturation region if

Easy✓
1995 PYQ

A BJT is said to be operating in the saturation region if

Easy✓
1992 PYQ

In a transistor having finite B, the forward bias across the base emitter junction is kept constant and the reverse bias across the collector base junction is increased. Neglecting the leakage across the collector base j...

Med
1989 PYQ

Of the four biasing circuits shown in Fig. For a BJT, indicate the one which can have maximum bias stability:

Easy✓📊