BJT
GATE Electronics & Communication · 20 questions across 13 years (1989-2024) · 33% recurrence rate
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1989–2024Difficulty mix
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All 20 questions on BJT
Which of the following statements is/are true for a BJT with respect to its DC current gain $\beta$?
An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then
The Ebers-Moll model of a BJT is valid
An npn BJT having reverse saturation current $$I_s\;=\;10^{-15}\;A$$ is biased in the forward active region with V BE = 700 mV. The thermal voltage (V T ) is 25 mV and the current gain (β) may vary from 50 to 150 due to...
If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?
In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage V EB = 600 mV, the emitter-collector voltage V EC (in Volts) is ______.
An increase in the base recombination of a BJT will increase
Consider two BJT's biased at the same collector current with area A 1 = 0.2 μm × 0.2 μm and A 2 = 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 26 mV, the intrinsic carrier concentratio...
For a BJT, the common-base current gain $$\alpha = \,\,0.98$$ and the colector base junction reverse bias saturation current I co = 0.6 $$\mu {\rm A}$$. This BJT is connected in the common emitter mode and operated in th...
For a BJT the common base current gain $$\alpha$$ = 0.98 and the collector base junction reverse bias saturation current I CO = 0.6μA. This BJT is connected in the common emitter mode and operated in the active region wi...
In a uniformly doped BJT, assume that N E , N B and N C are the emitter, base and collector dopings in atoms/cm 3 , respectively. If the emitter injection efficiency of the BJT is close unity, which one of the following...
The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:
Consider the following statements S1 and S2. S 1 : The $$\beta$$ of a bipolar transistor reduces if the base width is increased. S 2 : The $$\beta$$ of a bipolar transistor increases if the doping concentration in the ba...
Introducing a resistor in the emitter of a common amplifier, stabilizes the dc operating point against variations in
The Early-Effect in a bipolar junction transistor is caused by
The breakdown voltage of a transistor with its base open is BV CEO with emitter open is BV CBO , then
A BJT is said to be operating in the saturation region if
A BJT is said to be operating in the saturation region if
In a transistor having finite B, the forward bias across the base emitter junction is kept constant and the reverse bias across the collector base junction is increased. Neglecting the leakage across the collector base j...
Of the four biasing circuits shown in Fig. For a BJT, indicate the one which can have maximum bias stability: