BJT

Consider the circuit shown in the Figure with $V_i = 3$ V and $V_{CC} = 12$ V. Assume $V_{BE} = 0.7$ V and $\beta_{dc} = 99$ for the BJT. Which of the following options is the corr...

Figure shows the output characteristics of two different Bipolar Junction Transistors (BJT), BJT 1 with magnitude of Early voltage |V_A1|, and BJT 2 with magnitude of Early voltage...

A small signal source, Vi(t) = A cos(10^5t) + B sin(10^7t) is applied to a BJT circuit as shown in the Figure. Assume zero source resistance, VBE = 0.7 V, βdc = 99, Early voltage =...

A simplified small-signal equivalent circuit of a BJT-based amplifier is given below. The small-signal voltage gain Vo/Vs (in V/V) is _________.

The ideal BJT in the circuit given below is biased in the active region with a β of 100. If I_B is 10 µA, then V_CE (in Volts, rounded off to two decimal places) is ________.

Which of the following statements is/are true for a BJT with respect to its DC current gain β?

Which of the following statements is/are true for a BJT with respect to its DC current gain $\beta$?

The correct circuit representation of the structure shown in the figure is

An npn bipolar junction transistor (BJT) is operating in the active region. If the reverse bias across the base-collector junction is increased, then

The Ebers-Moll model of a BJT is valid

In the circuit shown in the figure, the BJT has a current gain (β) of 50. For an emitter-base voltage V EB = 600 mV, the emitter-collector voltage V EC (in Volts) is ______.

If the base width in a bipolar junction transistor is doubled, which one of the following statements will be TRUE?

An npn BJT having reverse saturation current $$I_s\;=\;10^{-15}\;A$$ is biased in the forward active region with V BE = 700 mV. The thermal voltage (V T ) is 25 mV and the current...

An increase in the base recombination of a BJT will increase

Consider two BJT's biased at the same collector current with area A 1 = 0.2 μm × 0.2 μm and A 2 = 300 μm × 300 μm. Assuming that all other device parameters are identical, kT/q = 2...

A BJT in common-base configuration is used to amplify a signal received by a $$50\,\Omega $$ antena. Assume kT/q = 25 mV. The value of the collector bias current ( in mA ) required...

A BJT is baised in forward active mode Assume V BE = 0.7 V, kT/q = 25 mV and reverse saturation current I s = 10 -13 A. The transconductance of the BJT (in mA/V) is

If the emitter resistance in a common-emitter voltage amplifier is not bypassed, it will

For a BJT the common base current gain $$\alpha$$ = 0.98 and the collector base junction reverse bias saturation current I CO = 0.6μA. This BJT is connected in the common emitter m...

For a BJT, the common-base current gain $$\alpha = \,\,0.98$$ and the colector base junction reverse bias saturation current I co = 0.6 $$\mu {\rm A}$$. This BJT is connected in th...

In a uniformly doped BJT, assume that N E , N B and N C are the emitter, base and collector dopings in atoms/cm 3 , respectively. If the emitter injection efficiency of the BJT is...

The DC current gain ($$\beta$$) of a BJT is 50. Assuming that the emitter injection efficiency is 0.995, the base transport factor is:

Consider the following statements S1 and S2. S 1 : The $$\beta$$ of a bipolar transistor reduces if the base width is increased. S 2 : The $$\beta$$ of a bipolar transistor increas...

A bipolar transistor is operating in the active region with a collector current of 1mA. Assuming that the 'β' of the transistor is 100 and the transconductance (g m ) and the input...

An npn BJT has g m = 38 mA/V, $${C_\mu }\, = {10^{ - 14}}$$ F, $${C_\pi }\, = 4\, \times {10^{ - 13}}\,F$$ and DC current gain $$\beta \, = \,90$$. For this transistor f T and $${f...

Introducing a resistor in the emitter of a common amplifier, stabilizes the dc operating point against variations in

The current gain of a bipolar transistor drops at high frequencies because of

An NPN transistor (with $${C_\pi }\,\, = \,\,0.3\,\,$$ pf) has a unity gain cutoff frequency $${f_T}$$ of 400 MHz at a DC-bias current I c = 1mA. The value of its $${C_\mu }$$ (in...

The emitter coupled pair of BJT’s gives a linear transfer relation between the differential output voltage and the differential input voltage V id only. When the magnitude of V id...

In a differential Amplifier, CMRR can be improved by using an increased

The $${f_T}$$ of a BJT is related to its $${g_{m,}}\,\,{C_\pi }$$ and $${C_\mu }$$ as follows

An npn transistor has a beta cut-off frequency $${f_\beta }$$ of 1MHz and Common Emitter short circuit low frequency current gain $${\beta _o}$$ of 200. The unity gain frequency $$...

A BJT is said to be operating in the saturation region if

The breakdown voltage of a transistor with its base open is BV CEO with emitter open is BV CBO , then

A BJT is said to be operating in the saturation region if

The Early-Effect in a bipolar junction transistor is caused by

A change in the value of the Emitter resistance (R e in a difference Amplifier.

A common emitter transistor amplifier has a collector current of 1.0 mA when its base current is 25 $$\mu$$A at the room temperature. It's input resistance is approximately equal t...

In a transistor having finite B, the forward bias across the base emitter junction is kept constant and the reverse bias across the collector base junction is increased. Neglecting...

Of the four biasing circuits shown in Fig. For a BJT, indicate the one which can have maximum bias stability:

The quiescent collector current I c , of a transistor is increased by changing resistance. As a result