For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (J L ) is 2.5 mA/cm 2 and the open-circuit voltage (V$$_{oc}$$) is 0.451 V. consider thermal voltage (V$$_T$$) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged. V$$_{oc}$$ (in volts) will be ______.

GATE 2017 Electronics & Communication PYQ — Electronic Devices and Vlsi

GATE 2017Set 2PYQNATanswer pendingexplanation soonmedium

Electronic Devices and Vlsi · Diodes

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Drill mode: PN junction · 6/15

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Recurring concept

Diodes has appeared in GATE Electronics & Communication 24 times across 16 years (2015, 2017, 2020, 2024, 2025, ...).