PN junction

Consider a p-n junction diode when it is forward biased with 2 V. Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, $E_{fn...

An ideal p-n junction germanium diode has a reverse saturation current of 10 μA at 300 K. The voltage (in Volts, rounded off to two decimal places) to be applied across the junctio...

The photocurrent of a PN junction diode solar cell is 1 mA. The voltage corresponding to its maximum power point is 0.3 V. If the thermal voltage is 30 mV, the reverse saturation c...

Consider the recombination process via bulk traps in a forward biased $p n$ homojunction diode. The maximum recombination rate is $U_{\max }$. If the electron and the hole capture...

In an ideal pn junction with an ideality factor of 1 at T=300 K, the magnitude of the reverse-bias voltage required to reach 75% of its reverse saturation current, rounded off to 2...

For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (J L ) is 2.5 mA/cm 2 and the open-circuit voltage (V$$_{oc}$$) is 0.451...

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is

Which of the following is NOT associated with a P-N junction?

In a p + n junction diode under reverse bias, the magnitude of electric field is maximum at

A P + -N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be:

A Silicon PN junction at a temperature of 20°C has a reverse saturation current of 10 pico-Amperes (pA). The reverse saturation current at 40°C for the same bias is approximately

A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ɛ r = 11.7 and the permittivity of free space ɛ 0 = 8.854...

The diffusion potential across a P-N junction

The diffusion capacitance of a P-N junction