Diodes

An ideal p-n junction germanium diode has a reverse saturation current of $10 \mu \mathrm{~A}$ at 300 K . The voltage (in Volts, rounded off to two decimal places) to be applied across the junction to get a forward bias...

The photocurrent of a PN junction diode solar cell is 1 mA. The voltage corresponding to its maximum power point is 0.3 V. If the thermal voltage is 30 mV, the reverse saturation current of the diode (in nA, rounded off...

Consider the recombination process via bulk traps in a forward biased $p n$ homojunction diode. The maximum recombination rate is $U_{\max }$. If the electron and the hole capture cross sections are equal, which one of t...

A $p n$ junction solar cell of area $1.0 \mathrm{~cm}^2$, illuminated uniformly with $100 \mathrm{mWcm}^{-2}$; has the following parameter : Efficiency $=15 \%$, open circuit voltage $=0.7 \mathrm{~V}$, fill factor $=0.8...

For a particular intensity of incident light on a silicon pn junction solar cell, the photocurrent density (J L ) is 2.5 mA/cm 2 and the open-circuit voltage (V$$_{oc}$$) is 0.451 V. consider thermal voltage (V$$_T$$) to...

The built-in potential of an abrupt p-n junction is 0.75V. If its junction capacitance (C J ) at a reverse bias (V R ) of 1.25V is 5pF, the value of C J (in pF) when V R = 7.25V is ___________.

A region of negative differential resistance is observed in the current voltage characteristics of a silicon PN junction if

When the optical power incident on a photodiode is 10μW and the responsivity is 0.8 A/W, the photocurrent generated (in μA) is ________.

In a forward biased P-N junction diode, the sequence of events that best describes the mechanism of current flow is

Which of the following is NOT associated with a P-N junction?

A P + -N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be:

In a p + n junction diode under reverse bias, the magnitude of electric field is maximum at

A Silicon PN junction at a temperature of 20°C has a reverse saturation current of 10 pico-Amperes (pA). The reverse saturation current at 40°C for the same bias is approximately

A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ɛ r = 11.7 and the permittivity of free space ɛ 0 = 8.854 × 10 -12 F/m.The depletion capacitance o...

At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias of 0.718 V. Under the conditions stated above, the closest ap...

Choose proper substitutes for X and Y to make the following statement correct Tunnel diode and Avalanche photodiode are operated in X bias and Y bias respectively.

For small signal a.c. operation, a practical forward biased diode can be modeled as

The static characteristic of an adequately forward biased p-n junction is a straight line, if the plot is of

The diffusion potential across a P-N junction

The depletion capacitance, C J , of an abrupt P-N junction with constant doping on either side varies with reverse bias, V R , as

A zener diode works on the principle of

The built-in potential (Diffusion Potential) in a p-n junction

The small signal capacitances of an abrupt P + −N junction is 1 nF at zero bias. If the built-in voltage is 1 volt, the capacitance at a reverse bias voltage of 99 volts is equal to

The diffusion capacitance of a P-N junction