Consider a p-n junction diode when it is forward biased with 2 V. Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, $E_{fn}$ in the n-side and $E_{fp}$ in the p-side?

GATE 2026 Electronics & Communication Q25 — Electronics and Communication Engineerin

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Electronics and Communication Engineering · Semiconductor Devices - PN Junction Diode

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Semiconductor Devices - PN Junction Diode has appeared in GATE Electronics & Communication 2 times across 2 years (2019, 2026).

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PN junctionforward biasquasi Fermi levelsenergy differencesemiconductor physics