Semiconductor Devices - PN Junction Diode
GATE Electronics & Communication · 2 questions across 2 years (2019-2026) · 5% recurrence rate
Recurrence sparkline
2019–2026201920232026
Difficulty mix
med 100%
Question types
MCQ1
NAT1
All 2 questions on Semiconductor Devices - PN Junction Diode
2026 Q25
Consider a p-n junction diode when it is forward biased with 2 V. Which of the following is/are the correct magnitude(s) of the energy difference between quasi Fermi-levels, $E_{fn}$ in the n-side and $E_{fp}$ in the p-s...
Med✓
2019 Q49
In an ideal pn junction with an ideality factor of 1 at T=300 K, the magnitude of the reverse-bias voltage required to reach 75% of its reverse saturation current, rounded off to 2 decimal places, is ______ mV. [k = 1.38...
Med