A silicon sample is uniformly doped with donor type impurities with a concentration of $$10^{16}/cm^3$$.The electron and hole mobilities in the sample are $$1200\;cm^2/V-s$$ and $$400\;cm^2/V-s$$ respectively. Assume complete ionization of impurities. The charge of an electron is $$1.6\;\times\;10^{-19}\;C$$.The resistivity of the sample $$\left(in\;\Omega-cm\right)$$ is _____________.

GATE 2015 Electronics & Communication PYQ — Electronic Devices and Vlsi

GATE 2015Set 1PYQNATanswer pendingexplanation sooneasy

Electronic Devices and Vlsi · Semiconductors

Concept intelligence

Drill mode: n-type · 5/9

Official answer key is not available for this question yet.

Studying seriously for GATE CSE?

Keep browsing free. Pro unlocks the paid study loop: explanations, topic mastery, mistake notebook, and custom PYQ drills.

Recurring concept

Semiconductors has appeared in GATE Electronics & Communication 43 times across 22 years (2021, 2022, 2023, 2024, 2025, ...).