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resistivity
GATE Electronics & Communication · Semiconductor Physics - Intrinsic Semiconductors · 2015-2025
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All concepts →2025 Q46
The intrinsic carrier concentration of a semiconductor is 2.5 x 10^16 /m³ at 300 K. If the electron and hole mobilities are 0.15 m²/Vs and 0.05 m²/Vs, respectively, then the intrin...
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2015 PYQ
A silicon sample is uniformly doped with donor type impurities with a concentration of $$10^{16}/cm^3$$.The electron and hole mobilities in the sample are $$1200\;cm^2/V-s$$ and $$...
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