Devices

If the following switching devices have similar power ratings, which one of them is the fastest?

A charger supplies 100 W at 20 V for charging the battery of a laptop. The power devices, used in the converter inside the charger, operate at a switching frequency of 200 kHz. Which power device is best suited for this...

For the power semiconductor devices $$IGBT, MOSFET,$$ Diode and Thyristor, which one of the following statements is TRUE?

The typical ratio of latching current to holding current in a $$20$$ $$A$$ thyristor is

Circuit turn-off time of an $$SCR$$ is defined as the time

An $$SCR$$ is considered to be a semi - controlled device because

A $$1:1$$ pulse transformer $$(PT)$$ is used to trigger the $$SCR$$ in the adjacent figure. The $$SCR$$ is rated at $$1.5$$ $$kV$$, $$250$$ $$A$$ with $${{\rm I}_L} = 250\,mA,\,\,{{\rm I}_H} = 150\,mA,$$ and $${{\rm I}_{...

The conduction loss versus device current characteristic of a power $$MOSFET$$ is best approximated by

A bipolar junction transistor (BJT) is used as a power control switch by biasing it in the cutoff region (OFF state) or in the saturation region (ON state). In the ON state, for the BJT

A bipolar junction transistor $$(BJT)$$ is used as a power control switch by biasing it in the cut-off region (OFF state) or in the saturation region (ON state). In the ON state, for the $$BJT.$$

The enhancement type n-channel MOSFET is represented by the symbol

The $$MOSFET$$ switch in its on - state may be considered equivalent to

The uncontrolled electronic switch employed in power electronic converters is

In a commutation circuit employed to turn off an $$SCR$$, Satisfactory turn-off is obtained when.

If a diode is connected in anti - parallel with a thyristor, then

Which semiconductor power device out of the following is not a current triggered device?

Which of the following does not cause permanent damage of an $$SCR?$$

A switched mode power supply operating at $$20$$ $$kHz$$ to $$100$$ $$kHz$$ range uses as the main switching element

A triac can be triggered by a gate pulse of __________ polarity

The thermal resistance between the body of a power semiconductor device and the ambient is expressed as