FET

An NMOS transistor operating in the linear region has $I_{D}$ of 5 $\mu$A at $V_{DS}$ of 0.1 V. Keeping $V_{GS}$ constant, the $V_{DS}$ is increased to 1.5 V. Given that $\mu_{n}C_{ox} \frac{W}{L}$ = 50 $\mu$A/$V^2$, the...

Consider a MOS capacitor made with p-type silicon. It has an oxide thickness of 100 nm, a fixed positive oxide charge of $10^{-8}$ C/cm 2 at the oxide-silicon interface, and a metal work function of 4.6 eV. Assume that t...

For a MOS capacitor, $$\mathrm{V_{fb}}$$ and $$\mathrm{V_{t}}$$ are the flat-band voltage and the threshold voltage, respectively. The variation of the depletion width ($$\mathrm{W_{dep}}$$) for varying gate voltage ($$\...

Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 $$\mu$$m and width 100 $$\mu$$m. The product of electron mobility ($$\mu$$ n ) and oxide capacitance per unit area (C ox ) is $$\mu$$ n C ox =...

For an $n$-channel silicon MOSFET with 10 nm gate oxide thickness, the substrate sensitivity ( $\partial V_T / \partial\left|V_{B S}\right|$ ) is found to be $50 \mathrm{mV} / \mathrm{V}$ at a substrate voltage $\left|V_...

A MOS capacitor is fabricated on p-type Si (silicon) where the metal work function is 4.1 eV and electron affinity of Si is 4.0 eV, E c - E F = 0.9 eV; where E c and E F are conduction band minimum and the Fermi energy l...

An n-channel enhancement mode MOSFET is biased at V GS > V TH and V DS > (V GS - V TH ), where V GS is the gate-to-source voltage, V DS is the drain-to-source voltage and V TH is the threshold voltage. Considering channe...

Consider an n-channel MOSFET having width W, length L, electron mobility in the channel $$\mu_n$$ and oxide capacitance per unit area $$C_{ox}$$. If gate-to-source voltage V GS =0.7 V, drain-to source voltage V DS =0.1V,...

Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double of T1. Both the transistor are biased in the saturation region of operation, but the gate overdrive voltage (V GS - V...

A voltage V G is applied across a MOS capacitor with metal gate and p-type silicon substrate at T=300 K. The inversion carrier density (in number of carriers per unit area) for V G = 0.8 V is $$2\,\, \times \,\,{10^{11}}...

Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \times {10^{ - 6}}{\rm A}{V^{ - 2}}$$ , t...

Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET): P: As channel length reduces, OFF-state current increases. Q:As channel length reduces, output resistance increases. R:...

A long-channel NMOS transistor is biased in the linear region with V DS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?

Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of V GS and V DS . Given, g m = 0.5$$\mu {\rm A}/V$$ for V DS = 50 m V and V GS = 2V, g d...

In a MOS capacitor with an oxide layer thickness of 10 nm, the maximum depletion layer thickness is 100 nm. The permittivities of the semiconductor and the oxide layer are $${\varepsilon _s}$$ and $${\varepsilon _{os}}$$...

A MOSFET in saturation has a drain current of 1 mA for V DS =0.5V. If the channel length modulation coefficient is 0.05 V -1 , the output resistance (in k$$\Omega $$) of the MOSFET is______

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased to 6 V while keeping gate-source voltage...

If fixed positive charges are present in the gate oxide of an n-channel enhancement type MOSFET, it will lead to

The slope of the I D vs. V GS curve of an n-channel MOSFET in linear region is 10 -3 $${\Omega ^{ - 1}}$$ at V DS = 0.1V. For the same device, neglecting channel length modulation, the slope of the $$\sqrt {{{\rm I}_D}}...

A depletion type N -channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage V TH = -0.5 V, V GS = 2.0 V, V DS = 5 V, W/L=100, C OX =10 -8 F/cm 2 and $${\mu _n}$$ =...

An ideal MOS capacitor has boron doping concentration of 10 15 cm -3 in the substrate. When a gate voltage is applied, a depletion region of width 0.5 $$\mu m$$ is formed with a surface (channel) potential of 0.2V. Given...

In a MOSFET operating in the saturation region, the channel length modulation effect causes

The measured transconductance g m of an NMOS transistor operating in the linear region is plotted against the gate voltage V G at constant drain voltage V D . Which of the following figures represents the expected depend...

An n-channel depletion MOSFET has following two points on its I D - V GS curve: (i)V GS = 0 at I d = 12 mA and (ii)V GS = -6 Volts at Z o =$$\infty $$ Which of the following Q-points will give the highest transconductanc...

An n-channel depletion MOSFET has following two points on its I D − V GS curve: (i) V GS = 0 at I D = 12 mA and (ii) V GS = - 6 Volts at I D = 0 Which of the following Q-points will give the highest trans-conductance gai...

A MOS capacitor made using p-type substrate is in the accumulation mode. The dominant charge in the channel is due to the presence of

Consider the following statements S1 and S2. S1: The threshold voltage (V T ) of a MOS capacitor decreases with increase in gate oxide thickness S2: The threshold voltage (V T ) of a MOS capacitor decreases with increase...

The drain of an n-channel MOSFET is shorted to the gate so that V GS = V DS . The threshold voltage (V T ) of MOSFET is 1 V. If the drain current (I D ) is 1 mA for V GS = 2 V, then for V GS = 3 V, I D is

The action of a JFET in its equivalent circuit can be best represented as a

When the gate-to-source voltage (V GS ) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the drain current is observed to be 1 mA. Neglecting the channel width modulation effect and assuming...

An n-channel JEFT has I DSS = 2 mA and V p = −4 V. It's transconductance g m (in mA/V) for an applied gate-to-source voltage V GS of –2V is:

An n-channel JFET has I DSS = 1 mA and V p = -5 V. Its maximum transconductance is ______

The threshold voltage of an n-channel MOSFET can be increased by

The transit time of the current carriers through the channel of an FET decides its ____________characteristics.

Channel current is reduced on application of a more positive voltage to the gate of a depletion mode n-channel MOSFET.

The transit time of a current carriers through the channel of an FET decides its ____________characteristics.

An n-channel JFET has a pinch-off voltage V P = -5 V, V DS (max) = 20 V and g m = 2 mA/V. The minimum ‘ON’ resistance is achieved in the JEFT for

An n-channel JFET has a pinch-off voltage of V p = -5V. V DS (max) = 20V and g m = 2mA/V. The minimum 'ON' resistance is achieved in the JFET for