transconductance
GATE Electronics & Communication · Analog Electronics - MOSFETs · 1988-2025
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All concepts →The identical MOSFETS M₁ and M₂ in the circuit given below are ideal and biased in the saturation region. M₁ and M₂ have a transconductance gₘ of 5 mS. The input signals (in Volts)...
An NMOS transistor operating in the linear region has IDS of 5 µA at VDS of 0.1 V. Keeping VGS constant, the VDS is increased to 1.5 V. Given that \mu_n C_{ox} \frac{W}{L} = 50 \mu...
An NMOS transistor operating in the linear region has $I_{D}$ of 5 $\mu$A at $V_{DS}$ of 0.1 V. Keeping $V_{GS}$ constant, the $V_{DS}$ is increased to 1.5 V. Given that $\mu_{n}C_...
Consider an n-channel MOSFET having width W, length L, electron mobility in the channel $$\mu_n$$ and oxide capacitance per unit area $$C_{ox}$$. If gate-to-source voltage V GS =0....
Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double of T1. Both the transistor are biased in the saturation region of operation, b...
Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of V GS and V DS . Given, g m = 0.5$$\mu {\rm A}/V...
The desirable characteristics of a transconductance amplifier are
A BJT is baised in forward active mode Assume V BE = 0.7 V, kT/q = 25 mV and reverse saturation current I s = 10 -13 A. The transconductance of the BJT (in mA/V) is
The measured transconductance g m of an NMOS transistor operating in the linear region is plotted against the gate voltage V G at constant drain voltage V D . Which of the followin...
In a transconductance amplifier , it is desirable to have
The input impedance (Z i ) and the output impedance (Z o ) of an ideal transconductance (voltage controlled current source) amplifier are
An n-channel depletion MOSFET has following two points on its I D − V GS curve: (i) V GS = 0 at I D = 12 mA and (ii) V GS = - 6 Volts at I D = 0 Which of the following Q-points wil...
An n-channel depletion MOSFET has following two points on its I D - V GS curve: (i)V GS = 0 at I d = 12 mA and (ii)V GS = -6 Volts at Z o =$$\infty $$ Which of the following Q-poin...
A bipolar transistor is operating in the active region with a collector current of 1mA. Assuming that the 'β' of the transistor is 100 and the transconductance (g m ) and the input...
An n-channel JEFT has I DSS = 2 mA and V p = −4 V. It's transconductance g m (in mA/V) for an applied gate-to-source voltage V GS of –2V is:
An n-channel JFET has I DSS = 1 mA and V p = -5 V. Its maximum transconductance is ______
The quiescent collector current I c , of a transistor is increased by changing resistance. As a result