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Concept drill

transconductance

GATE Electronics & Communication · Analog Electronics - MOSFETs · 1988-2025

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2025 Q43

The identical MOSFETS M₁ and M₂ in the circuit given below are ideal and biased in the saturation region. M₁ and M₂ have a transconductance gₘ of 5 mS. The input signals (in Volts)...

mediumanswer key
2024 Q64

An NMOS transistor operating in the linear region has IDS of 5 µA at VDS of 0.1 V. Keeping VGS constant, the VDS is increased to 1.5 V. Given that \mu_n C_{ox} \frac{W}{L} = 50 \mu...

hard
2024 PYQ

An NMOS transistor operating in the linear region has $I_{D}$ of 5 $\mu$A at $V_{DS}$ of 0.1 V. Keeping $V_{GS}$ constant, the $V_{DS}$ is increased to 1.5 V. Given that $\mu_{n}C_...

mediumbasic explanation
2017 PYQ

Consider an n-channel MOSFET having width W, length L, electron mobility in the channel $$\mu_n$$ and oxide capacitance per unit area $$C_{ox}$$. If gate-to-source voltage V GS =0....

medium
2017 PYQ

Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double of T1. Both the transistor are biased in the saturation region of operation, b...

easyanswer key
2016 PYQ

Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of V GS and V DS . Given, g m = 0.5$$\mu {\rm A}/V...

medium
2014 PYQ

The desirable characteristics of a transconductance amplifier are

easyanswer key
2014 PYQ

A BJT is baised in forward active mode Assume V BE = 0.7 V, kT/q = 25 mV and reverse saturation current I s = 10 -13 A. The transconductance of the BJT (in mA/V) is

medium
2008 PYQ

The measured transconductance g m of an NMOS transistor operating in the linear region is plotted against the gate voltage V G at constant drain voltage V D . Which of the followin...

mediumanswer key
2007 PYQ

In a transconductance amplifier , it is desirable to have

easyanswer key
2006 PYQ

The input impedance (Z i ) and the output impedance (Z o ) of an ideal transconductance (voltage controlled current source) amplifier are

easyanswer key
2006 PYQ

An n-channel depletion MOSFET has following two points on its I D − V GS curve: (i) V GS = 0 at I D = 12 mA and (ii) V GS = - 6 Volts at I D = 0 Which of the following Q-points wil...

mediumanswer key
2006 PYQ

An n-channel depletion MOSFET has following two points on its I D - V GS curve: (i)V GS = 0 at I d = 12 mA and (ii)V GS = -6 Volts at Z o =$$\infty $$ Which of the following Q-poin...

mediumanswer key
2004 PYQ

A bipolar transistor is operating in the active region with a collector current of 1mA. Assuming that the 'β' of the transistor is 100 and the transconductance (g m ) and the input...

easyanswer key
1999 PYQ

An n-channel JEFT has I DSS = 2 mA and V p = −4 V. It's transconductance g m (in mA/V) for an applied gate-to-source voltage V GS of –2V is:

easyanswer key
1995 PYQ

An n-channel JFET has I DSS = 1 mA and V p = -5 V. Its maximum transconductance is ______

easy
1988 PYQ

The quiescent collector current I c , of a transistor is increased by changing resistance. As a result

easyanswer key