temperature dependence

For non-degenerately doped n-type silicon, which one of the following plots represents the temperature (T) dependence of free electron concentration (n)?

A Silicon PN junction at a temperature of 20°C has a reverse saturation current of 10 pico-Amperes (pA). The reverse saturation current at 40°C for the same bias is approximately

In an intrinsic semiconductor the free electron concentration depends on

The diffusion capacitance of a P-N junction