small-signal-model
GATE Electronics & Communication · BJT Amplifiers · 1988-2014
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All concepts →A BJT is baised in forward active mode Assume V BE = 0.7 V, kT/q = 25 mV and reverse saturation current I s = 10 -13 A. The transconductance of the BJT (in mA/V) is
An n-channel depletion MOSFET has following two points on its I D − V GS curve: (i) V GS = 0 at I D = 12 mA and (ii) V GS = - 6 Volts at I D = 0 Which of the following Q-points wil...
An n-channel depletion MOSFET has following two points on its I D - V GS curve: (i)V GS = 0 at I d = 12 mA and (ii)V GS = -6 Volts at Z o =$$\infty $$ Which of the following Q-poin...
A bipolar transistor is operating in the active region with a collector current of 1mA. Assuming that the 'β' of the transistor is 100 and the transconductance (g m ) and the input...
For small signal a.c. operation, a practical forward biased diode can be modeled as
A common emitter transistor amplifier has a collector current of 1.0 mA when its base current is 25 $$\mu$$A at the room temperature. It's input resistance is approximately equal t...
The quiescent collector current I c , of a transistor is increased by changing resistance. As a result