saturation region

An NMOS transistor operating in the linear region has $I_{D}$ of 5 $\mu$A at $V_{DS}$ of 0.1 V. Keeping $V_{GS}$ constant, the $V_{DS}$ is increased to 1.5 V. Given that $\mu_{n}C_...

An n-channel enhancement mode MOSFET is biased at V GS > V TH and V DS > (V GS - V TH ), where V GS is the gate-to-source voltage, V DS is the drain-to-source voltage and V TH is t...

Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double of T1. Both the transistor are biased in the saturation region of operation, b...

Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \...

A MOSFET in saturation has a drain current of 1 mA for V DS =0.5V. If the channel length modulation coefficient is 0.05 V -1 , the output resistance (in k$$\Omega $$) of the MOSFET...

The slope of the I D vs. V GS curve of an n-channel MOSFET in linear region is 10 -3 $${\Omega ^{ - 1}}$$ at V DS = 0.1V. For the same device, neglecting channel length modulation,...

In a MOSFET operating in the saturation region, the channel length modulation effect causes

The drain of an n-channel MOSFET is shorted to the gate so that V GS = V DS . The threshold voltage (V T ) of MOSFET is 1 V. If the drain current (I D ) is 1 mA for V GS = 2 V, the...

When the gate-to-source voltage (V GS ) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the drain current is observed to be 1 mA. Neglecting the chan...

A BJT is said to be operating in the saturation region if

A BJT is said to be operating in the saturation region if