reverse bias

The built-in potential of an abrupt p-n junction is 0.75V. If its junction capacitance (C J ) at a reverse bias (V R ) of 1.25V is 5pF, the value of C J (in pF) when V R = 7.25V is...

In a p + n junction diode under reverse bias, the magnitude of electric field is maximum at

A P + -N junction has a built-in potential of 0.8 V. The depletion layer width at a reverse bias of 1.2V is 2 µm. For a reverse bias of 7.2 V, the depletion layer width will be:

A Silicon PN junction diode under reverse bias has depletion region of width 10 µm. The relative permittivity of Silicon, ɛ r = 11.7 and the permittivity of free space ɛ 0 = 8.854...

The depletion capacitance, C J , of an abrupt P-N junction with constant doping on either side varies with reverse bias, V R , as

The Early-Effect in a bipolar junction transistor is caused by

The small signal capacitances of an abrupt P + −N junction is 1 nF at zero bias. If the built-in voltage is 1 volt, the capacitance at a reverse bias voltage of 99 volts is equal t...