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Concept drill

nMOS

GATE Electronics & Communication · Digital Electronics - CMOS Inverter · 2008-2024

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2024 Q17

In the circuit below, assume that the long channel NMOS transistor is biased in saturation. The small signal trans-conductance of the transistor is $g_m$. Neglect body effect, chan...

hard
2024 Q64

An NMOS transistor operating in the linear region has IDS of 5 µA at VDS of 0.1 V. Keeping VGS constant, the VDS is increased to 1.5 V. Given that \mu_n C_{ox} \frac{W}{L} = 50 \mu...

hard
2024 PYQ

An NMOS transistor operating in the linear region has $I_{D}$ of 5 $\mu$A at $V_{DS}$ of 0.1 V. Keeping $V_{GS}$ constant, the $V_{DS}$ is increased to 1.5 V. Given that $\mu_{n}C_...

mediumbasic explanation
2019 Q53

A CMOS inverter, designed to have a mid-point voltage V_I equal to half of Vdd, as shown in the figure, has the following parameters: Vdd = 3 V μn Cox = 100 μA/V^2 ; Vtn = 0.7 V fo...

medium
2016 PYQ

A long-channel NMOS transistor is biased in the linear region with V DS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?

easyanswer key
2016 PYQ

Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of V GS and V DS . Given, g m = 0.5$$\mu {\rm A}/V...

medium
2015 PYQ

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased t...

easy
2008 PYQ

The measured transconductance g m of an NMOS transistor operating in the linear region is plotted against the gate voltage V G at constant drain voltage V D . Which of the followin...

mediumanswer key