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MOSFET source

GATE Electronics & Communication · Semiconductors · 2012-2012

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2012 PYQ

The source of a silicon (n i = 10 10 per cm 3 ) n - channel MOS transistor has an aewa of 1 sq $$\mu m$$ and a depth of 1 $$\mu m$$ . If the dopant density in the source is 10 19 /...

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