linear region

An NMOS transistor operating in the linear region has IDS of 5 µA at VDS of 0.1 V. Keeping VGS constant, the VDS is increased to 1.5 V. Given that \mu_n C_{ox} \frac{W}{L} = 50 \mu...

An NMOS transistor operating in the linear region has $I_{D}$ of 5 $\mu$A at $V_{DS}$ of 0.1 V. Keeping $V_{GS}$ constant, the $V_{DS}$ is increased to 1.5 V. Given that $\mu_{n}C_...

Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 $$\mu$$m and width 100 $$\mu$$m. The product of electron mobility ($$\mu$$ n ) and oxide capacitance p...

Consider an n-channel MOSFET having width W, length L, electron mobility in the channel $$\mu_n$$ and oxide capacitance per unit area $$C_{ox}$$. If gate-to-source voltage V GS =0....

A long-channel NMOS transistor is biased in the linear region with V DS = 50 mV and is used as a resistance. Which one of the following statements is NOT correct?

Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of V GS and V DS . Given, g m = 0.5$$\mu {\rm A}/V...

A depletion type N -channel MOSFET is biased in its linear region for use as a voltage controlled resistor. Assume threshold voltage V TH = -0.5 V, V GS = 2.0 V, V DS = 5 V, W/L=10...

The slope of the I D vs. V GS curve of an n-channel MOSFET in linear region is 10 -3 $${\Omega ^{ - 1}}$$ at V DS = 0.1V. For the same device, neglecting channel length modulation,...

The measured transconductance g m of an NMOS transistor operating in the linear region is plotted against the gate voltage V G at constant drain voltage V D . Which of the followin...