germanium

The electron mobility μn in a non-degenerate germanium semiconductor at 300 K is 0.38 m²/Vs. The electron diffusivity Dn at 300 K (in cm²/s, rounded off to the nearest integer) is...

A Germanium sample of dimensions 1 cm × 1 cm is illuminated with a 20 mW, 600 nm laser light source as shown in the figure. The illuminated sample surface has a 100 nm of loss-less...

At 300 K, for a diode current of 1 mA, a certain germanium diode requires a forward bias of 0.1435 V. Where as a certain silicon diode requires a forward bias of 0.718 V. Under the...