excess carriers

Consider a long rectangular bar of direct bandgap p-type semiconductor. The equilibrium hole density is 10 17 cm $$-$$3 and the intrinsic carrier concentration is 10 10 cm $$-$$3 ....

A bar of silicon is doped with boron concentration of $10^{16} \mathrm{cm}^{-3}$ and assumed to be fully ionized. It is exposed to light such that electron-hole pairs are generated...

An n–type silicon sample is uniformly illuminated with light which generates 10 20 electron hole pairs per cm 3 per second. The minority carrier lifetime in the sample is 1 $$\math...

A thin P-type silicon sample is uniformly illuminated with light which generates excess carriers. The recombination rate is directly proportional to

A semiconductor is irradiated with light such that carriers are uniformly generated throughout its volume. The semiconductor is n-type with $$N_D=10^{19}/cm^3$$. If the excess elec...