Einstein relation

The electron mobility μn in a non-degenerate germanium semiconductor at 300 K is 0.38 m²/Vs. The electron diffusivity Dn at 300 K (in cm²/s, rounded off to the nearest integer) is...

The electron mobility $\mu_n$ in a non-degenerate germanium semiconductor at 300 K is $0.38 \mathrm{~m}^2 / \mathrm{Vs}$. The electron diffusivity $D_n$ at 300 K (in $\mathrm{cm}^2...

At T = 300 K, the hole mobility of a semiconductor $$\mu_p\;=500\;cm^2/V-s$$ and $$\frac{kT}q\;=\;26\;mV$$.The hole diffusion constant D p in cm 2 /s is__________.

Assume electronic charge q = 1.6×10 -19 C, kT/q = 25 mV and electron mobility μ n = 1000 cm 2 /V-s. If the concentration gradient of electrons injected into a P-type silicon sample...