drain current

Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 $$\mu$$m and width 100 $$\mu$$m. The product of electron mobility ($$\mu$$ n ) and oxide capacitance p...

Two n-channel MOSFETs, T1 and T2, are identical in all respects except that the width of T2 is double of T1. Both the transistor are biased in the saturation region of operation, b...

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased t...

The drain of an n-channel MOSFET is shorted to the gate so that V GS = V DS . The threshold voltage (V T ) of MOSFET is 1 V. If the drain current (I D ) is 1 mA for V GS = 2 V, the...

When the gate-to-source voltage (V GS ) of a MOSFET with threshold voltage of 400 mV, working in saturation is 900 mV, the drain current is observed to be 1 mA. Neglecting the chan...