drain conductance

Consider a long-channel NMOS transistor with source and body connected together. Assume that the electron mobility is independent of V GS and V DS . Given, g m = 0.5$$\mu {\rm A}/V...

Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \...