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diffusion current
GATE Electronics & Communication · Semiconductor Physics - Carrier Transport · 2003-2026
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All concepts →2026 Q64
Consider that the concentration of electrons in a semiconductor bar varies linearly from 2 × 10^17 cm^−3 at x = 1 µm to 1× 10^16 cm^−3 at x = 4 µm along the x-direction. Assume tha...
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2024 Q26
The free electron concentration profile n(x) in a doped semiconductor at equilibrium is shown in the figure, where the points A, B, and C mark three different positions. Which of t...
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2003 PYQ
The electron concentration in a sample of uniformly doped n-type silicon at 300 o K varies linearly from $$10^{17}/cm^3$$ at x = 0 to $$6\times10^{16}/cm^3$$ at x = 2 $$\mu m$$. As...
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