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compensation doping
GATE Electronics & Communication · Semiconductors · 1991-2014
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Consider a silicon sample doped with N D = 1×10 15 /cm 3 donor atoms. Assume that the intrinsic carrier concentration n i = 1.5×10 10 /cm 3 . If the sample is additionally doped wi...
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1991 PYQ
A silicon sample is uniformly doped with 10 16 phosphorous atoms/cm 3 and 2 ×10 16 boron atoms/cm 3 . If all the dopants are fully ionized, the material is
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