channel-length-modulation

An n-channel enhancement mode MOSFET is biased at V GS > V TH and V DS > (V GS - V TH ), where V GS is the gate-to-source voltage, V DS is the drain-to-source voltage and V TH is t...

Consider the following statements for a metal oxide semiconductor field effect transistor (MOSFET): P: As channel length reduces, OFF-state current increases. Q:As channel length r...

Consider an n-channel metal oxide semiconductor field effect transistor (MOSFET) with a gate-to-source voltage of 1.8 V. Assume that $${W \over L} = 4,{\mu _{\rm N}}{C_{ox}} = 70 \...

The current in an enhancement mode NMOS transistor biased in saturation mode was measured to be 1 mA at a drain-source voltage of 5 V. When the drain-source voltage was increased t...

In a MOSFET operating in the saturation region, the channel length modulation effect causes

Which of the following is NOT associated with a P-N junction?